Fullerene derivatives have been demonstrated as negative-tone resists for electron beam lithography with impressive capability for high resolution and high plasma etching resistance, due to their carbon-rich nature. Their primary drawback of extremely poor sensitivity has been addressed by implementation of chemical amplification. A three-component chemically amplified negative-tone resist has been developed via the addition of a photoacid generator and a crosslinker to a fullerene derivative. This thesis work presents a significant extension of the previous work. The resists have undergone comprehensive optimisation, and systematic characterisation of electron beam lithography behaviours. In the first part, a systematic study into chemical amplification of negative-tone fullerene resists through variation of resist composition, additive, and resist processing in order to optimise sensitivity, resolution, line width roughness and etch resistance is presented. Sensitivity of sub 10 C/cm2 at 20 keV, half pitch resolution of 20 nm, a minimum sparse feature linewidth of 12 nm, line width roughness of sub 5 nm, and high etch resistance comparable with a commercial novolac resist have been demonstrated. The second part presents the development of a chemically amplified positive-tone fullerene based resists with the advantage of aqueous base solution development. Their lithographic capability is evaluated and discussed.
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机译：富勒烯衍生物由于其富含碳的性质，已被证明是用于电子束光刻的负型抗蚀剂，具有令人印象深刻的高分辨率和高抗等离子蚀刻能力。它们的主要缺点是灵敏度极差，已通过化学扩增的方法解决。通过向富勒烯衍生物中添加光酸产生剂和交联剂，开发了一种三组分化学放大负型抗蚀剂。本文工作是对先前工作的重要扩展。抗蚀剂已经进行了全面的优化，并且对电子束光刻行为进行了系统表征。在第一部分中，系统地研究了通过改变抗蚀剂成分，添加剂和抗蚀剂工艺来优化负性富勒烯抗蚀剂的化学放大，以优化灵敏度，分辨率，线宽粗糙度和抗蚀刻性。已证明在20 keV时灵敏度低于10 C / cm2，半间距分辨率为20 nm，最小稀疏特征线宽为12 nm，线宽粗糙度小于5 nm，并且具有与商用酚醛清漆抗蚀剂相当的耐蚀性。第二部分介绍了化学扩增正电荷富勒烯基抗蚀剂的开发，该显影剂具有开发碱性水溶液的优势。他们的光刻能力进行了评估和讨论。
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