[[abstract]]Ambipolar conduction of a pentacene-based field-effect transistor can be attributed to dual interface engineering, which occurs at the dielectric/semiconductor interface and electrode/semiconductor interface. While the former was realized by utilizing a hydroxyl-free gate dielectric, the latter was made feasible by the use of appropriate metal source and drain electrodes. The field-effect hole and electron mobilities of 0.026 and 0.0023 cm(2)/V s, respectively, were extracted from the transfer characteristics of pentacene organic field-effect transistors utilizing polymethyl methacrylate as the trap-reduction interfacial modified layer and Al as the source and drain (S/D) electrodes. We demonstrated a complementarylike inverter by using two identical ambipolar transistors and it can be operated both in the first and third quadrants with a high output voltage gain of around 10. (C) 2008 American Institute of Physics.
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机译:[[摘要]]基于并五苯的场效应晶体管的双极性传导可归因于双界面工程,该工程发生在介电/半导体界面和电极/半导体界面。前者是通过利用无羟基栅极电介质实现的,而后者通过使用适当的金属源电极和漏电极而变得可行。从并五苯有机场效应晶体管的传输特性中提取出场效应空穴和电子迁移率分别为0.026和0.0023 cm(2)/ V s,该迁移率晶体管使用聚甲基丙烯酸甲酯作为阱还原界面改性层,并使用Al作为掺杂剂。源极和漏极(S / D)电极。我们通过使用两个相同的双极性晶体管演示了一种互补式逆变器,该逆变器可以在第一象限和第三象限中工作,并具有约10的高输出电压增益。(C)2008年美国物理研究所。
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