[[abstract]]Co/Ag/Ge (111) films show an in-plane anisotropy as deposited at 200 K. The ferromagnetic inactive layers, formed due to the intermixing of Co and Ge, can be efficiently reduced to zero thickness by introducing 6 monolayer (ML) Ag as a buffer layer. For Co/3 ML Ag/Ge (111) films, the amount of Ag is not enough to separate Co and the Ge substrate. This results in the formation of a 2-monolayer-thick nonferromagnetic Co-Ge compound layer and a rough interface of the Co layer.
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机译：[[抽象]] Co / Ag / Ge（111）薄膜在200 K下沉积时显示面内各向异性。由于Co和Ge的混合形成的铁磁非活性层可通过引入而有效地减小到零厚度6个单层（ML）Ag作为缓冲层。对于Co / 3 ML Ag / Ge（111）膜，Ag的量不足以分离Co和Ge衬底。这导致形成2-单层厚的非铁磁Co-Ge化合物层和Co层的粗糙界面。
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