Optimization of Back Channel Leakage Characteristic in PD SOI p-MOSFET

摘要

[[abstract]]The impact of back channel leakage (BCL) is thoroughly investigated when scaling down partially depleted (PD) silicon-on-insulator (SOI) devices. Back channel voltage is introduced as an indicator for monitoring the behavior of BCL. In addition to front-gate devices, back-gate devices also suffer from short channel effect. Finally, BCL can be successfully suppressed by optimizing process parameters such as the Si remains, the well implant, and the SOI thickness.