Subpicosecond time-resolved Raman studies of electron-longitudinal optical phonon interactions in InN

摘要

[[abstract]]Electron-longitudinal optical phonon scattering rate in InN has been directly measured by subpicosecond time-resolved Raman spectroscopy. The experimental results show that for a thick layer of InN grown on GaN, the average total electron-longitudinal optical phonon scattering rate is (5.1 +/- 1.0)x10(13) s(-1). This enormous electron-longitudinal optical phonon scattering rate, which is comparable to that observed in GaN, has been attributed to the extremely polar nature of InN.