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Secondary ion mass spectrometric studies of SrTiO3 buffering effect on (Pb1-xLax)(Zr1-yTiy)1-x/4O3 thin films prepared by pulsed laser deposition

机译:二次离子质谱研究SrTiO3对脉冲激光沉积制备的(Pb1-xLax)(Zr1-yTiy)1-x / 4O3薄膜的缓冲作用

摘要

[[abstract]]Phase-pure perovskite (Pb1-xLax)(Zr1-yTiy)1-x/4O3 (PLZT) films were deposited in situ onto SrTiO3/Si substrate by pulsed laser deposition from stoichiometric targets. The PLZT films grown on (100) Si and Pt/Ti/SiO2/Si substrates showed a perovskite-pyrochlore mixed structure. Apparent Pb deficiency at the near-surface region was noted on PLZT films grown on all substrates employed in this work. This was accredited to the Pb loss occurred by volatilization of PbO at high temperature under low oxygen pressure environment. The buffering effect of SrTiO3 was established using XRD and SIMS analyses. The diffusion of Si atoms from the inner Si substrate to the outer PLZT film was assumed to be the cause for the broken down of PLZT films under electric stress.
机译:[[抽象]]相变钙钛矿(Pb1-xLax)(Zr1-yTiy)1-x / 4O3(PLZT)薄膜通过化学计量靶的脉冲激光沉积原位沉积到SrTiO3 / Si衬底上。在(100)Si和Pt / Ti / SiO2 / Si衬底上生长的PLZT膜显示出钙钛矿-烧绿石混合结构。在这项工作中使用的所有基板上生长的PLZT膜上,在近表面区域都出现了明显的Pb缺乏。这被认为是由于在低氧压环境下高温下PbO挥发引起的Pb损失。利用XRD和SIMS分析确定SrTiO3的缓冲作用。硅原子从内部Si衬底向外部PLZT膜的扩散被认为是造成PLZT膜在电应力作用下破裂的原因。

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    LingY. C.;

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  • 年度 2011
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  • 原文格式 PDF
  • 正文语种 [[iso]]en
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