Observation of light emission from real-space transfer devices

摘要

[[abstract]]Light emitters based on real‐space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p‐type collecting layer. So far, problems associated with the growth of p‐type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real‐space transfer of majority electrons into an n‐type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real‐space transferred electrons.