High quality YBa2Cu3O7-delta films with controllable in-plane orientations grown on yttria-stabilized zirconia substrates

摘要

[[abstract]]The pulsed-laser deposition (PLD) technique was used to grow high T-C superconducting YBa2Cu3O7-delta (YBCO) films on both virgin and ion-bombarded yttria-stabilized zirconia (YSZ) substrates. To pattern high T-C films for device applications, the ion milling technique is often used to turn virgin YSZ substrates into ion-bombarded substrates. Multilayered processes require the growth of high T-C films on these ion-bombarded substrates. The purpose of this work was to investigate the growing conditions for these two kinds of substrate surfaces. We found that high quality 0 degrees in-plane orientation films can be grown on either substrate when the growth temperature is about 810 degrees C. The thin film grown at this temperature has T-C of about 90.3 K and J(C) of about 4x10(6) A cm(-2) at 77 K. On virgin substrates, the in-plane orientations of YBCO films grown within the temperature range of 790-730 degrees C exhibit a mixture of 0 degrees and 45 degrees domains. As the growth temperature decreases, the dominant orientation shifts gradually from 0 degrees to 45 degrees. On the other hand, on ion-bombarded YSZ substrates, the in-plane orientation of YBCO films grown within the same temperature range shows that the 45 degrees domain is more prominent. Furthermore, 9 degrees subpeaks appear around the 0 degrees peak on ion-bombarded YSZ substrates. At a lower growth temperature of around 690 degrees C, only the 45 degrees domain exists on the virgin substrate, while a small amount of 0 degrees domain is present with the majority of 45 degrees domain on the ion-bombarded substrate. The T-C and J(C) of the films grown at around 690 degrees C on virgin substrates are as good as films grown at high temperatures, despite the difference in the in-plane orientations.