[[abstract]]We report the development of a low temperature (∼400 °C) and low pressure (∼0.5 kg/cm2) spin-on-glass (SOG) wafer bonding technique that can bond compound semiconductors and silicon without using chemical-mechanical polishing, surface etching or other intermediate materials in the bonding process. The relation of bonding quality and applied bonding pressure was studied. Cross sectional transmission electron microscopy analysis shows that the bonding interface is smooth, uniform and did not generate dislocations. Using this SOG bonding method, simulated vertical-cavity surface-emitting laser (VCSEL) structures that consist of GaInAs and InP cavities sandwiched by Al–oxide/Si distributed Bragg reflectors (DBRs) were successfully bonded to a silicon substrate with the bonding interface located outside the bottom DBR away from the VCSEL cavity.
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机译：[[摘要]]我们报告了低温（〜400 C）和低压（〜0.5 kg / cm2）旋涂玻璃（SOG）晶圆键合技术的发展，该技术可以在不使用化学试剂的情况下键合化合物半导体和硅-在粘合过程中进行机械抛光，表面蚀刻或其他中间材料。研究了粘结质量与外加粘结压力的关系。横截面透射电子显微镜分析表明，键合界面光滑，均匀且没有产生位错。使用这种SOG键合方法，将由GaInAs和InP腔体夹在中间的Al-oxide / Si分布式布拉格反射器（DBR）组成的模拟垂直腔表面发射激光器（VCSEL）结构成功地与键合界面定位在硅基板上在底部DBR外部，远离VCSEL腔。
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