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Thermal nitridation of the Si(111)-(7X7) surface studied by scanning tunneling microscopy and spectroscopy

机译:Si(111)-(7X7)表面的热氮化通过扫描隧道显微镜和光谱研究

摘要

[[abstract]]By using scanning tunneling microscopy and spectroscopy (STM and STS), the initial stages of NH3 exposure on Si(111)-(7x7) at different substrate temperatures and dosages have been studied. At room and very high (similar to1050degreesC) temperatures, the 7x7 surface structure remains and the nitrided sites appear darker, randomly distributing on the surface. Moreover, we find a constant ratio (similar to3.46-3.83) of reacted center adatoms to reacted corner adatoms on the partially nitrided surfaces. At intermediately temperatures (similar to900degreesC), the majority (>90%) of the reacted surface forms the well-ordered silicon nitride 8 X 8 reconstruction. In this regime, hexagonal- and triangular-shaped nitride islands can be observed on the 8x8 and 7x7 surfaces, respectively. We have also used STS to investigate the changes of local density of states on the nitrogen-reacted 7x7 surfaces prepared by different conditions.
机译:[[摘要]]通过使用扫描隧道显微镜和光谱法(STM和STS),研究了在不同底物温度和剂量下,Si(111)-(7x7)上NH3暴露的初始阶段。在室温和非常高的温度(类似于1050摄氏度)下,仍保留7x7的表面结构,渗氮的部位显得更暗,随机分布在表面上。此外,我们发现在部分氮化的表面上,反应的中心原子与反应的角原子的比率恒定(类似于3.46-3.83)。在中等温度(约900摄氏度)下,大部分(> 90%)已反应表面形成了秩序井然的氮化硅8 X 8重建体。在这种情况下,可以分别在8x8和7x7表面上看到六边形和三角形的氮化物岛。我们还使用STS研究了在不同条件下制备的氮反应7x7表面上状态局部密度的变化。

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  • 作者

    Wu CL;

  • 作者单位
  • 年度 2011
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  • 原文格式 PDF
  • 正文语种 [[iso]]en
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