[[abstract]]A relatively high-efficiency, fluorescent pure-white organic light-emitting diode was fabricated using a polysilicic acid (PSA) nanodot-embedded polymeric hole-transporting layer (HTL). The diode employed a mixed host in the single emissive layer, which comprised 0.5 wt % yellow 5,6,11,12-tetra-phenylnaphthacene doped in the mixed host of 50 % 2-(N,N-diphenyl-amino)-6-[4-(N,N-diphenylamino)styryl]naphthalene and 50 % N,N-bis-(1-naphthyl)-N,N-diphenyl-1,10-biphenyl-4-4-diamine. By incorporating 7 wt % 3 nm PSA nanodot into the HTL of poly(3,4-ethylene-dioxythiophene)-poly-(styrenesulfonate), the efficiency at 100 cd m-2 was increased from 13.5 lm W-1 (14.7 cd A-1; EQE: 7.2 %) to 17.1 lm W-1 (17.6 cd A-1; EQE: 8.3 %). The marked efficiency improvement may be attributed to the introduction of the PSA nanodot, leading to a better carrier-injection-balance.
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机译：[摘要]使用聚硅酸（PSA）纳米点嵌入的聚合物空穴传输层（HTL）制备了效率较高的荧光纯白色有机发光二极管。该二极管在单个发射层中采用了混合主体，该混合主体包含0.5 wt％的黄色5,6,11,12-四苯基萘并苯掺杂在混合主体中的50％2-（N，N-二苯基-氨基）-6 -[4-（N，N-二苯基氨基）苯乙烯基]萘和50％的N，N-双-（1-萘基）-N，N-二苯基-1，10-联苯基-4-4-二胺。通过将7 wt％的3 nm PSA纳米点结合到聚（3,4-乙烯-二氧噻吩）-聚（苯乙烯磺酸盐）的HTL中，100 cd m-2的效率从13.5 lm W-1（14.7 cd A -1； EQE：7.2％）至17.1lm W-1（17.6cd A-1； EQE：8.3％）。效率的显着提高可能归因于PSA纳米点的引入，从而导致了更好的载流子注入平衡。
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