Chemical Vapour Deposition of Tantalum Silicide Thin Film from Difluorosilylene and Tantalum Halides

摘要

[[abstract]]Thin films of TaSix have been grown on Si(111), SiO2 and graphite by LPCVD using SiF2 and TaX(5) (X = F, Cl) as the precursors. Thin films prepared at 190-300 degrees C contained polycrystalline TaSi2; 190 degrees C is the lowest temperature reported for the CVD preparation of TaSi2. The compositions of the thin films were found to be 50% TaSi2 and 50% amorphous silicon (a-Si).