Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application

摘要

[[abstract]]Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO/sub 3/ (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600/spl deg/C to 350 /spl deg/C/spl sim/400/spl deg/C LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.