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Substrate coupling effect under various noise injection topologies in LC-voltage controlled oscillator

机译:LC压控振荡器在各种噪声注入拓扑下的基板耦合效应

摘要

[[abstract]]Impact of substrate noise coupling on a wideband VCO (5.6 to 7.5 GHz) was investigated using different noise injection topologies. Measured results indicated that IM2 increased by ~ 5 to 7 dB and IM3 by ~ 6 to 10 dB when the inductor guard ring floated. In addition, the noise at high frequencies still degraded the VCO performance even not injected directly to the substrate. The observed trends were modeled and explained by a simple physical-based resistive network together with the oxide layer capacitors successfully.
机译:[[摘要]]使用不同的噪声注入拓扑结构,研究了基板噪声耦合对宽带VCO(5.6至7.5 GHz)的影响。测量结果表明,当电感器保护环浮起时,IM2增加了〜5至7 dB,IM3增加了〜6至10 dB。另外,高频噪声即使不直接注入基板也仍会使VCO性能下降。通过简单的基于物理的电阻网络以及氧化物层电容器对观察到的趋势进行建模和解释。

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