Microstructure and Resistivity of Laser-Annealed Au-Ge Ohmic Contacts on GaAs

摘要

[[abstract]]The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs arepresented. The specific contact resistivity was observed to decrease with increasinglaser energy density while the grain size of the polycrystalline microstructure(as observed by transmission electron microscopy) increased. Athigher energy densities, both parameters were found to remain constant withinthe experimental conditions used. Transmission electron micrographs, andsputtering Auger electron spectroscopic data showing Ga, As, and Ge redistributionwithin the Au-Ge film are also presented.