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Dark current in an active pixel complementary metal-oxide-semiconductor sensor

机译:有源像素互补金属氧化物半导体传感器中的暗电流

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摘要

We present an analysis of dark current from a complementary metal?oxide?semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection area of the pixel and another within the sense node, present complications to correction of the dark current. The two sources are shown to generate unique and characteristic dark current behavior with respect to varying exposure time, temperature, and/or frame rate. In particular, a pixel with storage time in the sense node will show a dark current dependence on frame rate and the appearance of being a ?stuck pixel? with values independent of exposure time. On the other hand, a pixel with an impurity located within the collection area will show no frame rate dependence, but rather a linear dependence on exposure time. A method of computing dark frames based on past dark current behavior of the sensor is presented and shown to intrinsically compensate for the two different and unique sources. In addition, dark frames requiring subtraction of negative values, arising from the option to modify the bias offset, are shown to be appropriate and possible using the computational method.
机译:我们提出了具有全局快门的互补金属氧化物半导体(CMOS)有源像素传感器的暗电流分析。存在两种暗电流源,一种在像素的收集区域内,另一种在感测节点内,为校正暗电流带来了麻烦。相对于变化的曝光时间,温度和/或帧频,这两个信号源显示出产生独特且特征性的暗电流行为。特别地,在感测节点中具有存储时间的像素将表现出暗电流对帧速率的依赖性,并且看起来是“卡住像素”。其值与曝光时间无关。另一方面,在收集区域内具有杂质的像素将不显示帧速率依赖性,而是显示曝光时间的线性依赖性。提出并示出了一种基于传感器过去的暗电流行为来计算暗帧的方法,该方法固有地补偿了两个不同且唯一的信号源。另外,由于使用了修改偏置偏移的选项而导致需要减去负值的暗框显示为适当的,并且可以使用计算方法来实现。

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