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Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

机译:脉冲激光沉积法在各种衬底上制备ZnO薄膜的缺陷研究

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摘要

ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.
机译:通过结合X射线衍射(XRD)的慢正电子注入光谱(SPIS)对沉积在各种基板上的ZnO薄膜进行了表征。研究的所有薄膜均显示纤锌矿结构和20-100 nm的微晶尺寸。对于在单晶衬底上生长的薄膜,微晶的镶嵌分布相对较小,而对于在无定形衬底上生长的薄膜则相当大。 SPIS研究表明,沉积在单晶衬底上的ZnO薄膜比沉积在非晶衬底上的薄膜具有更高的缺陷密度。这很可能是由于较高的失配位错密度,它补偿了薄膜和基材之间的晶格失配。

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