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Mechanical properties of amorphous indium-gallium-zinc oxide thin films on compliant substrates for flexible optoelectronic devices

机译:用于柔性光电器件的柔性基板上的非晶态铟 - 镓 - 锌氧化物薄膜的机械性能

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摘要

Amorphous indium–gallium–zinc-oxide (a-IGZO) thin films were deposited using RF magnetron sputtering on polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) flexible substrates and their mechanical flexibility investigated using uniaxial tensile and buckling tests coupled with optical microscopy. The uniaxial fragmentation test demonstrated that the crack onset strain of the IGZO/PENwas ~2.9%,which is slightly higher than that of IGZO/PET. Also, uniaxial tensile crack density analysis suggests that the saturated crack spacing of the film is strongly dependent on the mechanical properties of the underlying polymer substrate. Buckling test results suggest that the crack onset strain (equal to ~1.2%, of the IGZO/polymer samples flexed in compression to ~5.7 mm concave radius of curvature) is higher than that of the samples flexed with the film being in tension (convex bending) regardless whether the substrate is PEN or PET. The saturated crack density of a-IGZO film under the compression buckling mode is smaller than that of the film under the tensile buckling mode. This could be attributed to the fact that the tensile stress encouraged this crack formation originating from surface defects in the coating. It could also be due to the buckling delamination of the thin coating from the substrate at a lower strain than that at which a crack initiates during flexing in compression. These results provide useful information on the mechanical reliability of a-IGZO films for the development of flexible electronics.
机译:使用射频磁控溅射在聚萘二甲酸乙二醇酯(PEN)和聚对苯二甲酸乙二酯(PET)柔性基板上沉积非晶态铟镓锌氧化物(a-IGZO)薄膜,并使用单轴拉伸和屈曲测试以及光学显微镜对它们的机械柔性进行了研究。单轴断裂试验表明,IGZO / PEN的裂纹萌生应变约为2.9%,略高于IGZO / PET。同样,单轴拉伸裂纹密度分析表明,膜的饱和裂纹间距强烈取决于下面的聚合物基材的机械性能。屈曲测试结果表明,裂纹开始应变(在压缩至约5.7 mm凹曲率半径的IGZO /聚合物样品中,裂纹起始应变(等于〜1.2%)高于在薄膜处于拉伸状态(凸面)的情况下的裂纹起始应变弯曲),无论基材是PEN还是PET。在压缩屈曲模式下,a-IGZO膜的饱和裂纹密度小于在拉伸屈曲模式下的膜的饱和裂纹密度。这可以归因于这样的事实,即张应力促进了这种裂纹的形成,该裂纹的形成源​​自涂层中的表面缺陷。这也可能是由于薄涂层从基片上的屈曲脱层所致,其应变要小于压缩弯曲时裂纹产生的应变。这些结果提供了有关a-IGZO薄膜机械可靠性的有用信息,可用于开发柔性电子产品。

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