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Comparison of the structure of grain boundaries in silicon and diamond by molecular-dynamics simulations

机译：用分子动力学模拟比较硅和金刚石晶界结构

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Keblinski, P.; Phillpot, S.R.; Wolf, D.; Gleiter, H.;
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年度 1997
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1. AMORPHOUS STRUCTURE OF GRAIN BOUNDARIES AND GRAIN JUNCTIONS IN NANOCRYSTALLINE SILICON BY MOLECULAR-DYNAMICS SIMULATION [J] . P.KEBLINSKI, S.R..PHILLPOT, D.WOLF Acta Materialia . 1997,第3期

机译：分子动力学模拟的纳米晶硅中晶界和晶界的非晶结构
2. Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries - art. no. 045403 [J] . Zapol P., Sternberg M., Curtiss LA., Physical Review, B. Condensed Matter . 2002,第4期

机译：超纳米晶金刚石晶界中杂质的紧密结合分子动力学模拟-艺术。没有。 045403
3. Atomistic simulations of structures and mechanical properties of 011 tilt grain boundaries and their triple junctions in diamond [J] . Shenderova OA., Brenner DW. Physical Review, B. Condensed Matter . 1999,第10期

机译：金刚石中<011>倾斜晶界及其三重结的结构和力学性能的原子模拟
4. Comparison of the structure of grain boundaries in silicon and diamond by molecular-dynamics simulations [C] . P.Keblinski, S.R.Phillpot, D.Wolf, Symposium on Polycrystalline Thin Films - Structure, Texture, Properties and Applications III March 31-April 4,1997, San Francisco, California, U.S.A . 1997

机译：通过分子动力学模拟比较硅和金刚石中晶界的结构
5. Dislocation/grain boundary interactions in the diamond cubic structure [D] . Sagalowicz, Laurent. 1992

机译：钻石立方结构的位错/晶界相互作用
6. A primer on selecting grain boundary sets for comparison of interfacial fracture properties in molecular dynamics simulations [O] . Rémi Dingreville, Doruk Aksoy, Douglas E. Spearot -1

机译：选择分子边界集以比较分子动力学模拟中界面断裂特性的入门
7. Structural disjoining potential for grain boundary premelting and grain coalescence from molecular-dynamics simulations [O] . Fensin, Saryu, Olmsted, David, Buta, Dorel, 2010

机译：晶界预熔和晶粒的结构分离潜力来自分子动力学模拟的聚结
8. Comparison of the structure of grain boundaries in silicon and diamond by molecular-dynamics simulations [R] . Keblinski, P., Phillpot, S. R., Wolf, D., 1997

机译：用分子动力学模拟比较硅和金刚石晶界结构

Comparison of the structure of grain boundaries in silicon and diamond by molecular-dynamics simulations

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