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Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

机译：0.5-0.6 eV外延GaInassb晶格匹配Gasb的重组过程分析

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Donetsky, D; Anikeev, S; Gu, N; Belenky, G; Luryi, S; Wang, CA; Shiau, DA; Dashiell, M; Beausang, J; Nichols, and G;
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1. Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb/GaSb and GaInAsSb/InAs alloys as a function of composition [J] . Rita Magri, Alex Zunger, H. Kroemer Journal of Applied Physics . 2005,第4期

机译：晶格匹配的GaInAsSb / GaSb和GaInAsSb / InAs合金的能带隙和能带边能量随组成的变化
2. Reflection high‐energy electron diffraction studies on the molecular‐beam‐epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb [J] . Journal of Applied Physics . 1985,第10期

机译：GaSb上AISb，GaSb，InAs，InAsSb和GaInAsSb的分子束外延生长的反射高能电子衍射研究
3. RECOMBINATION NEARBY N-n GaSb/GaInAsSb STAGGERED LINEUP HETEROJUNCTION [J] . A.A. POPOV, A.N. IMENKOV, N.M. KOLCHANOVA, Acta Physica Polonica. A . 1995,第2期

机译：N-n GaSb / GaInAsSb交错排列的异质结附近的重组
4. Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb [C] . D. Donetsky, S. Anikeev, N. Gu, Conference on Thermophotovoltaic Generation of Electricity . 2004

机译：0.5-0.6 EV外延Gainassb格子与喘气的重组过程分析
5. Mechanism analysis of the factors that determine the efficiency of recombination events during HIV-1 reverse transcription [D] . Rigby, Sean T. 2009

机译：决定HIV-1逆转录过程中重组事件效率的因素的机制分析
6. Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs) [O] . A. B. Ikyo, I. P. Marko, K. Hild, -1

机译：温度稳定的中红外GaInAsSb / GaSb垂直腔表面发射激光器（VCSEL）
7. Analysis of Recombination Processes in 0.5 - 0.6eV Epitaxial GaInAsSb Lattice-Matched to GaSb [O] . Donetsky, D, Anikeev, S, Ning, G, 2004

机译：0.5 - 0.6eV外延GaInassb晶格匹配Gasb的复合过程分析
8. Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb [R] . Donetsky, D., Anikeev, S., Gu, N., 2004

机译：0.5-0.6 eV外延GaInassb晶格匹配Gasb的重组过程分析

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

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