STRUCTURE AND CHEMICAL COMPOSITION OF SEMICONDUCTORudMATERIALS SnSe PREPARATION OF THIN LAYER USING VACUUMudEVAPORASTION

摘要

This study aims to obtain the crystal structure, surface morphology andudchemical composition of thin film of SnSe preparated by using vaccumudevaporation method and to determine the effect of variations spacers distance inudthe thin film of SnSe.udSnSe thin film preparation was done process at a pressure of 2 x 10⁻⁵ mbarudand a substrat tampetature of 600°C using evaporation method. SnSe thin filmudpreparation process was done by giving spacer between the substrate and theudsource at 10 cm, at 15 cm and at 25 cm. Characterization process was performedudusing X-ray diffraction (XRD) to determine the structure of a thin film, ScanningudElectron Microscopy (SEM) to determine the thin film of surface morphology andudEnergy Dispersive X-Ray Analysis (EDAX) to determine the chemical compositionudof the thin film.udXRD characterization showed that sample 2 and sample 3 SnSe crystal isudpolycrystalline and their crystal structure was orthorombik. As for sample 1, itudwas also polycrystalline, but not orthorombik. SnSe crystal sample 1 has a valueudof lattice parameters a = 11.32 Å for spacer of 10 cm. SnSe crystal sample 2 has audvalue of lattice parameters a = 11.38 Å, b = 4.17 Å, c = 4.48 Å for spacer of 15udcm. SnSe crystal sample 3 has a value of lattice parameters a = 11.46 Å, b = 4.09udÅ, c = 4.62 Å for spacer of 25 cm. SnSe crystal preparation results with 10 cmudspacer variation has better quality than the crystals with the variation of spacerud15 cm and 25 cm in terms of intensity and FWHM values. SEM characterizationudresults indicate that SnSe surface morphology of the crystals formed fairly evenly.udResults of EDAX analysis, showed that the comparison of the percentage ofudcrystalline Sn to Se thin layers was 1: 0.919