We report experimental transport measurements of a vertical hybrid ferromagnetic (FM)/III-V semiconductor (SC)/ferromagnetic(FM) type structure, i.e., Cr(20ML)/Co(15ML)/GaAs(50 nm, n-type)/Al/sub 0.3/Ga/sub 0.7/As(200 nm, n-type)/FeNi(30 nm). The current-voltage (I-V) characteristics reveal Schottky/tunneling type behavior in the direction of FeNi/Semiconductor/Co and observed to be dependent on external magnetic field. The magnetoresistance (MR) behavior shows a strong dependence on the measured current and field. At low fields no significant change in MR has been observed with increasing current. However, at high fields the MR initially increases with increasing current and becomes stable beyond a critical current of 10 /spl mu/A. A maximum of 12% change in the MR has been observed at room temperature, which is far larger than that of the conventional AMR effect. This property of the device could be utilized as field sensors or magnetic logic devices.
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机译：我们报告了垂直混合铁磁（FM）/ III-V半导体（SC）/铁磁（FM）型结构的实验传输测量，即Cr（20ML）/ Co（15ML）/ GaAs（50 nm，n型） / Al / sub 0.3 / Ga / sub 0.7 / As（200 nm，n型）/ FeNi（30 nm）。电流-电压（I-V）特性揭示了在FeNi /半导体/ Co方向上的肖特基/隧道型行为，并观察到它取决于外部磁场。磁阻（MR）行为显示出对测得的电流和磁场的强烈依赖性。在低磁场下，随着电流的增加，没有观察到MR的显着变化。然而，在高磁场下，MR最初会随着电流的增加而增加，并在超过10 / spl mu / A的临界电流时变得稳定。在室温下，MR的最大变化为12％，这远远大于传统AMR效应的变化。装置的这种性质可以用作场传感器或磁逻辑装置。
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