首页> 外文OA文献 >Increased Reliability of Power Switching Transistors In Electronic Ballasts

【2h】

Increased Reliability of Power Switching Transistors In Electronic Ballasts

机译：提高电子镇流器中功率开关晶体管的可靠性

页面导航

著录项
相似文献
相关主题

著录项

作者
Fettinger James;
展开▼
作者单位

展开▼
年度 1996
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Single-switch soft-switching electronic ballast with high input power factor [J] . Lin C.-S., Chen C.-L. IEE Proceedings. Part B . 1998,第4期

机译：高输入功率因数的单开关软开关电子镇流器
2. Constant on time controlled zero voltage switching electronic ballast with power quality improvement [J] . Shrivastava Ashish, Singh Bhim Power Electronics, IET . 2015,第9期

机译：恒定导通时间控制的零电压开关电子镇流器，改善了电能质量
3. Electronic Ballast for Metal Halide Lamps with High Power Factor and Soft-Switching Features [J] . YEN-MING LIU, LON-KOU CHANG WSEAS Transactions on Electronics . 2006,第11期

机译：具有高功率因数和软开关功能的金属卤化物灯电子镇流器
4. Switching dynamics of power bipolar transistor in high-frequency electronic ballast [C] . Mulay, A., Trivedi, Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE . 1998

机译：高频电子镇流器中功率双极晶体管的开关动力学
5. Design and Development of GaN-Based Vertical Transistors for Increased Power Density in Power Electronics Applications [D] . Ji, Dong. 2017

机译：电力电子应用增加功率密度的GaN基垂直晶体管的设计与开发
6. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors [O] . Eunah Ko, Jaemin Shin, Changhwan Shin 2018

机译：用于低功率应用的陡峭开关设备：负差分电容/电阻场效应晶体管
7. Power electronic ballast using resonant switched capacitor techniques [O] . Cheng KWE, Wang HY, Cheng DKW, 2000

机译：使用谐振开关电容器技术的电力电子镇流器
8. Production Engineering Measure for Improvement of Production Technique to Increase the Reliability for Pnp Intermediate Power Silicon Planar Switching Transistors, Including 2n3502 [R] . Knudsen, J., Floyd, D. 1966

机译：生产工程措施改进生产技术，提高pnp中功率硅平面开关晶体管的可靠性，包括2n3502

Increased Reliability of Power Switching Transistors In Electronic Ballasts

著录项

相似文献

相关主题

期刊订阅