Modelling and development of high Q thin-film bulk acoustic wave (BAW) devices is a topic of research gaining attention due to good selectivity and steep transition band offered by these devices used for cellular applications. A preliminary survey of various modeling approaches of these devices and their validations are presented in this paper. So far two existing one dimensional (1D) models have been investigated and compared. The results obtained from the models show relatively good agreement with experimental data of the FBAR reported in the literature. The prime objective of this project is to investigate novel BAW resonators, to determine the essential physical parameters and to develop physics based model thereof suited for circuit applications.
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