首页> 外文OA文献 >Pore Narrowing and Formation of Ultrathin Yttria-Stabilized Zirconia Layers in Ceramic Membranes by Chemical Vapor Deposition/Electrochemical Vapor Deposition
【2h】

Pore Narrowing and Formation of Ultrathin Yttria-Stabilized Zirconia Layers in Ceramic Membranes by Chemical Vapor Deposition/Electrochemical Vapor Deposition

机译:化学气相沉积/电化学气相沉积法在陶瓷膜中孔隙缩小和超薄氧化钇稳定氧化锆层的形成

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Chemical vapor deposition (CVD) and electrochemical vapor deposition (EVD) have been applied to deposit yttria-stabilized-zirconia (YSZ) on porous ceramic media. The experimental results indicate that the location of YSZ deposition can be varied from the surface of the substrates to the inside of the substrates by changing the CVD/EVD experimental conditions, i.e., the concentration ratio of the reactant vapors. The deposition width is strongly dependent on the deposition temperature used. The deposition of YSZ inside the pores resulted in pore narrowing and eventually pore closure, which was measured by using permpor-ometry. However, deposition of YSZ on top of porous ceramic substrates (outside the pores) did not result in a reduction of the average pore size. Ultrathin, dense YSZ layers on porous ceramic substrates can be obtained by suppressing the EVD layer growth process after pore closure.
机译:化学气相沉积(CVD)和电化学气相沉积(EVD)已应用于在多孔陶瓷介质上沉积氧化钇稳定的氧化锆(YSZ)。实验结果表明,通过改变CVD / EVD实验条件,即反应物蒸气的浓
度,可以从基板表面到基板内部改变YSZ沉积的位置。沉积宽度在很大程度上取决于所使用的沉积温度。 YSZ在孔内的沉积导致孔变窄,最终导致孔闭,这是通过使用渗透压法测量的。但是,在多孔陶瓷基体的顶部(孔隙之外)沉积YSZ不会导致平均孔径的减小。通过抑制孔封闭后的EVD层生长过程,可以获得多孔陶瓷基板上的超薄致密YSZ层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号