Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18µm CMOS Technology

摘要

We show that poly-SiGe can be readily integrated as a gate material into an existing CMOS technology to achieve significant increase in the transistor performance. In order to preserve the standard salicidation scheme, a buffer poly-Si layer is introduced in the gate stack. PMOST channel profiles are optimized to account for the change of the gate workfunction. High-performance CMOS 0.18 µm devices are manufactured using p- and n-type poly-Si/Si0.8Ge 0.2 gates