首页> 外文OA文献 >Self Phase Modulation and Stimulated Raman Scattering due to High Power Femtosecond Pulse Propagation in Silicon-on-Insulator Waveguides.
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Self Phase Modulation and Stimulated Raman Scattering due to High Power Femtosecond Pulse Propagation in Silicon-on-Insulator Waveguides.

机译:硅绝缘体波导中高功率飞秒脉冲传播的自相位调制和受激拉曼散射。

摘要

Self Phase Modulation (SPM) and Stimulated Raman Scattering (SRS) in silicon waveguides have been observed and will be discussed theoretically using a modified Nonlinear Schrödinger Equation. The high optical peak powers needed for the experiments were obtained by coupling sub-picosecond (200fs) transform limited pulses with a spectral width of 12nm into a single mode silicon waveguide. Spectral broadening up to 50nm has been observed due to Self Phase Modulation. An intensity increase of the idler spectrum around 1650nm at the expense of the 1550nm pump signal has been observed as function of pump power, indicating the presence of Stimulated Raman Scattering.
机译:已经观察到硅波导中的自相位调制(SPM)和受激拉曼散射(SRS),并将在理论上使用修改后的非线性薛定ö方程进行讨论。实验所需的高光峰值功率是通过将光谱宽度为12nm的亚皮秒(200fs)变换受限脉冲耦合到单模硅波导中而获得的。由于自相位调制,已观察到光谱展宽到50nm。已经观察到,以1550nm泵浦信号为代价,闲置光谱的强度增加了约1650nm,这是泵浦功率的函数,表明存在受激拉曼散射。

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