Analysis and design of a charge pump circuit for high output current applications

摘要

A charge pump circuit has been developed that can deliver high currents even for a system supply voltage of 3 V. The circuit consists of capacitances, connected by MOS switches. The influence of the on-resistance of the switches on the circuit's output resistance has been analysed. The switches are implemented by PMOS transistors. The source bulk potential of these transistors is kept constant to prevent an increase in threshold voltage of the transistors. The maximum output voltage is determined by the breakdown voltage of the switches and not by the MOST's threshold voltage. The circuit has been realised and measurement results match with the calculated values.