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Modal analysis of silicon nanostructured waveguide with holey cladding in 2-D isosceles triangular lattice

机译:二维等腰三角形晶格中具有多孔包层的硅纳米结构波导的模态分析

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摘要

Silicon photonics, either in the form of integrated optical chips or fiber, has attracted much interest due to their small foot-print, high refractive-index, high thermal conductivity, high non-linear-optical coefficient, and compatibility with CMOS and fiber-drawing process technology. Recently, fabrication of well-arranged deeply etched nanometric holes on silicon has also been reported. This structure is potential for a.o. sensing applications due to the wide surface provided by the nano-holes. In this work, we report a modal analysis on a nanostructured silicon waveguide with holey cladding in 2-D isosceles lattice running parallel with the propagation axis. For this purpose, we used our finite-element method leaky mode solver. The diameter of the holes is 326 nm, and the lattice parameters are a = 680 nm and c = 481 nm.udComputations were carried out for wavelengths λ between 1.1-1.55 μm. Although an inverse woodpile bulk photonic crystal with similar lattice parameters (which is the 3-D form of the isosceles triangular lattice used in the cladding of our structure) was reported to exhibit bandgap around λ=1.21 μm, the waveguide under study shows no effect of such bandgap as this photonic-crystal-fiber-like waveguide relies on the leaky defect-resonance instead of photonic bandgap as its waveguiding mechanism.udAlthough the hole’s dimension is considerably smaller than the wavelength, the waveguide still shows extremely low confinement loss due to the high index contrast provided by the silicon-air interface.udThis fact implies that the dimension of the waveguide is still far from waveguiding limit, and the total losses are expected to be limited by the imperfection of the fabrication technology. At around λ=1.375 μm, we observed anti-crossing between q-HE21 and q-TM01 modes. We anticipate that the abrupt change of modal characteristics around this point might be useful for sensing applications. Such change does not only occur in the attenuation, but also in the group index. Additionally, we also observed the non-degeneracy of the two q-HE11 modes as results of symmetry breaking of the structure.ud
机译:集成光芯片或光纤形式的硅光子,由于其占地面积小,高折射率,高导热率,高非线性光学系数以及与CMOS和光纤的兼容性而备受关注。绘图工艺技术。最近,也已经报道了在硅上制造排列良好的深蚀刻纳米孔的方法。这种结构可能对纳米孔提供的宽表面,可用于传感应用。在这项工作中,我们报告了在二维等腰晶格中平行于传播轴的带孔包层的纳米结构硅波导的模态分析。为此,我们使用了有限元方法泄漏模式求解器。孔的直径为326 nm,晶格参数为a = 680 nm和c = 481 nm。 ud对波长在1.1-1.55μm之间的波长进行了计算。虽然据报道具有类似晶格参数的逆堆成堆的光子晶体(这是我们结构的覆层中使用的等腰三角形晶格的3-D形式)在λ= 1.21μm附近表现出带隙,但所研究的波导未显示任何作用像这种光子晶体光纤那样的带隙依赖于泄漏缺陷共振而不是光子带隙作为其波导机制。 ud尽管孔的尺寸比波长小得多,但波导仍然显示出极低的限制损耗 ud此事实表明,波导的尺寸仍远未达到波导极限,并且总损耗预计将受到制造技术缺陷的限制。在大约λ= 1.375μm处,我们观察到q-HE21和q-TM01模式之间的反交叉。我们预计,此时的模态特征突变可能对传感应用很有用。这种变化不仅发生在衰减中,而且还发生在组索引中。此外,我们还观察到两个q-HE11模式的非简并性是结构对称破坏的结果。 ud

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