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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors

机译:可调谐高频电容器品质因数与调谐比的权衡

摘要

A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications. Performance limitations are outlined for each given technology focusing on the quality factor (Q) and tuning ratio (eta) as figures of merit. The state of the art in terms of these figures of merit of several tunable and switchable technologies is visualized and discussed. If the performance of these criteria is not met, the application will not be feasible. The quality factor can typically be traded off for tuning ratio. The benchmark of tunable capacitor technologies shows that transistor-switched capacitors, varactor diodes, and ferroelectric varactors perform well at 2 GHz for tuning ratios below 3, with an advantage for GaAs varactor diodes. Planar microelectromechanical capacitive switches have the potential to outperform all other technologies at tuning ratios higher than 8. Capacitors based on tunable dielectrics have the highest miniaturization potential, whereas semiconductor devices benefit from the existing manufacturing infrastructure.
机译:根据物理限制提出了可调谐和可切换设备在微波频率下的基准,以显示其在可重构蜂窝应用中的潜力。概述了每种给定技术的性能局限性,重点放在品质因数(Q)和调整比(eta)上,作为品质因数。根据几种可调和可切换技术的优缺点,可以看到并讨论最新技术。如果不满足这些标准的性能,则该应用程序将不可行。通常可以权衡质量因数来调整比例。可调谐电容器技术的基准测试表明,对于低于3的调谐比,晶体管开关电容器,变容二极管和铁电变容二极管在2 GHz时性能良好,而GaAs变容二极管具有优势。平面微机电电容式开关在超过8的调谐比时有可能胜过所有其他技术。基于可调电介质的电容器具有最大的微型化潜力,而半导体器件则受益于现有的制造基础设施。

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