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Surface and grain boundary analysis of doped zirconia ceramics studied by AES and XPS

机译:用aEs和Xps研究掺杂氧化锆陶瓷的表面和晶界分析

摘要

The surface- and grain boundary composition of Y, Ce and Ti doped zirconia were studied by X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy/Scanning Auger Microscopy. The grain boundaries and free surfaces showed the same enrichment levels. After heat treatment ge 1000 DaggerC all yttria doped samples showed yttrium enrichment. In the ZrO2-Y2O3 system the yttrium enrichment did not depend on the bulk concentration and amounted 30–34 mol% YO1.5 in all cases. As a consequence the segregation factor increases with decreasing solute concentration in the bulk. The thickness of the segregation layer was about 2–4 nm. In the ternary Y doped systems yttrium is the main segregant. In ceria-doped tetragonal zirconia polycrystals (Ce-TZP) systems significant segregation of cerium starts atTge1300DaggerC and is mainly attributed to Ce3+. In Y,Ti-TZP systems also strong segregation of Ti4+ occurs. The absolute value of the increase of the surface concentration in fine grained material is smaller than in coarse grained material. This is mainly due to depletion of the bulk.
机译:用X射线光电子能谱和俄歇电子能谱/扫描俄歇显微镜研究了Y,Ce和Ti掺杂的氧化锆的表面和晶界组成。晶界和自由表面显示出相同的富集水平。 ge 1000 DaggerC热处理后,所有掺杂氧化钇的样品均显示出钇富集。在ZrO2-Y2O3系统中,钇的富集并不取决于体积浓度,在所有情况下,其YO1.5的含量为30-34 mol%。结果,随着主体中溶质浓度的降低,偏析因子增加。隔离层的厚度约为2-4 nm。在三元Y掺杂系统中,钇是主要的隔离物。在掺杂二氧化铈的四方氧化锆多晶(Ce-TZP)系统中,铈的显着偏析始于Tge1300DaggerC,主要归因于Ce3 +。在Y,Ti-TZP系统中,也会发生Ti4 +的强烈偏析。细粒材料中表面浓度增加的绝对值小于粗粒材料中表面浓度增加的绝对值。这主要是由于大量的消耗。

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