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Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties

机译：si集成电路中Cu金属化的扩散阻挡层：沉积和相关的薄膜特性

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This thesis presents results of a study focused on the growth processes of tungsten nitride silicide films by CVD; tungsten nitride and tungsten carbidonitride films by ALD

机译：本文提出了研究重点在于CVD法生长氮化硅硅化物薄膜的过程。 ALD法氮化钨和碳氮化钨薄膜

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Bystrova Svetlana;
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年度 2004
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正文语种 {"code":"en","name":"English","id":9}
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专利

1. Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion [J] . Takeyama Mayumi B., Sato Masaru, Aoyagi Eiji, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2016,第Null期

机译：自由基辅助低温沉积制备超薄TiNx薄膜及其对Cu扩散的阻挡性能
2. Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits [J] . S. Rudra, T. Waechtler, M. Friedrich, Physica status solidi . 2008,第4期

机译：椭圆偏振光谱法研究TaN和Ta薄扩散势垒对集成电路中铜互连的影响
3. Atomic layer deposition of WN_x thin films using a F-free tungsten metal- organic precursor and NH_3 plasma as a Cu-diffusion barrier [J] . Kim Jun Beom, Nandi Dip K., Kim Tae Hyun, Thin Solid Films . 2019,第SEPa1期

机译：使用无氟钨金属有机前驱体和NH_3等离子体作为Cu扩散阻挡层的WN_x薄膜的原子层沉积
4. Atomic Layer Deposition of Ultrathin TaN and Ternary Ta_(1-x)Al_xN_y Films for Cu Diffusion Barrier Applications in Advanced Interconnects [C] . S. Consiglio, K. Yu, S. Dey, Atomic layer deposition applications 11 . 2015

机译：超薄TaN和三元Ta_（1-x）Al_xN_y膜的原子层沉积，用于高级互连中的Cu扩散阻挡层应用
5. SUPERCONDUCTING PROPERTIES OF EPITAXIAL YBa2Cu3O7-8 THIN FILMS AND YBa2Cu3O7-8/PrBa2Cu3O7-8 HETEROSTRUCTURES GROWN BY PULSED LASER DEPOSITION [D] . Inam, Arun. 1992

机译：脉冲激光沉积生长的外延YBa2Cu3O7-8薄膜和YBa2Cu3O7-8 / PrBa2Cu3O7-8异质结构的超导性能
6. Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells [O] . Hyun-Jae Woo, Woo-Jae Lee, Eun-Kyong Koh, 2021

机译：锡薄膜的等离子体增强的原子层沉积作为CIGS太阳能电池的有效SE扩散屏障
7. Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films [O] . Jin-Seong Park, Sang-Won Kang, H. Kim 2006

机译：等离子体增强原子层沉积Ti-Si-n薄膜的生长机理和扩散阻隔性能
8. Metastable pitting corrosion of aluminum, Al-Cu, and Al-Si thin films in dilute HF solutions and its relevancy to the processing of integrated circuit interconnections. [R] . J. R. Scully D. E. Peebles 1991

机译：在稀HF溶液中铝，al-Cu和al-si薄膜的亚稳态点腐蚀及其与集成电路互连处理的相关性。

Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties

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