Focused ion beam nano-structuring of $Al_2O_3$ dielectric layers for photonic applications

摘要

In order to enable full integration of active integrated optical components based on Si-technology, high quality micro- and nano-structuring processes aiming at the development of on-chip resonator structures are to be achieved. By optimizing focused ion beam milling parameters such as ion current, dwell time, loop repetitions, scanning strategy, and applying a top metal layer for reducing charging effects and improving sidewall definition, reflection gratings on $Al_2O_3$ channel waveguides with smooth and uniform sidewalls were successfully demonstrated.ud