We present a surface micromachining process to fabricate AlN piezoelectric microstructures. The fabrication process utilizes Si02 sacrificial layer etching with Polysilicon as a structural layer. The significance of the process is that the polysilicon layer is used as a structural as weIl as a bottom electrode layer. A thin layer of Cr is used as a mask layer to etch both the AIN and polysilicon layers, while acting as a top electrode. The fabricated clamped-clamped beam microbridges show compressive stress. Preliminary results using phase-shift interferometry measurements show displacements of 8.3nmN on a typical microbridge with dimensions 385 x 50 /-lm.
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机译：我们提出了一种表面微细加工工艺来制造AlN压电微结构。该制造过程利用SiO 2牺牲层蚀刻，其中多晶硅作为结构层。该方法的重要性在于，将多晶硅层用作底部电极层。 Cr薄层用作掩模层，以蚀刻AIN和多晶硅层，同时充当顶部电极。所制造的夹紧梁微桥显示出压应力。使用相移干涉测量法的初步结果显示，在尺寸为385 x 50 / -lm的典型微桥上，位移为8.3nmN。
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