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Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces　―Revelation of threading dislocations in GaN―

机译：在光电化学蚀刻的n-GaN表面上形成的树状特征 - GaN中穿透位错的揭示 -

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YAMAMOTO Akio; AZUMA Katsuhiko; YASUDA Tomomi; HASHIMOTO Akihiro;
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年度 2000
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2. Dislocation revelation for 4H-SiC by using vaporized NaOH: a possible way to distinguish edge, screw and mixed threading dislocations by etch pit method [J] . Yong-zhao Yao, Yukari Ishikawa, Yoshihiro Sugawara, Materials science forum . 2014,第pta1期

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3. Enhanced Light Extraction from GaN-Based Vertical Light-Emitting Diodes with a Nano-Roughened N-GaN Surface Using Dual-Etch [J] . Tae Hyung Kim, Kyong Nam Kim, Jin Seok Seo, Journal of nanoscience and nanotechnology . 2013,第12期

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4. Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4o Off-Axis 4H-SiC Substrates [C] . T. Aigo, W. Ito, H. Tsuge, ECSCRM 2012 . 2013

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5. Dry-etched features for advanced waveguide design in GaN laser diodes [D] . Nedy, Joseph George. 2016

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6. Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires [O] . Ji-Hyeon Park, Arjun Mandal, San Kang, -1

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7. Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces　―Revelation of threading dislocations in GaN― [O] . YAMAMOTO Akio, AZUMA Katsuhiko, YASUDA Tomomi, 2000

机译：在光电化学蚀刻的n-GaN表面上形成的树状特征 - GaN中穿透位错的揭示 -

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

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Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces　―Revelation of threading dislocations in GaN―