Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

摘要

Current collapse measurements have been performedfor AlGaN/GaN high-electron-mobility transistors havingidentical breakdown voltages but with different field plate(FP) lengths. The results indicated that applying more positiveON-state gate biases resulted in pronounced recovery in thedynamic ON-resistance for the FP device, whereas no gate-biaseffects were observed for the device without FP. The mechanismresponsible for the reduced current collapse by FP is proposed,in which the key role is played during ON-state by the quick fieldeffectrecovery of partial channel depletion caused by electrontrapping at AlGaN surface states between gate and drain.