Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs/GaAs quantum dots

摘要

The strain distribution in single and double self-assembled InAsGaAs quantum dots is theoretically investigated by using a valence-force-field model. The results show strong influence of the capping conditions on the strain distribution in individual and stacked dots with wetting layers. In particular, the intermixing of atoms is incorporated into the strain calculations, leading to a conclusion that the atomic intermixing can notably modify the strain profiles near the interfaces of the stacked dot system. © 2008 American Institute of Physics.