首页> 外文OA文献 >Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation

【2h】

Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation

机译：用La掺入改善Ta2O5栅介质非晶InGaZnO薄膜晶体管的性能

页面导航

摘要
著录项
相似文献
相关主题

摘要

published_or_final_version

机译：已发布或最终版本

著录项

作者
Lai PT; Qian LX; Liu XZ; Han CY;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Improved Performance of Amorphous InGaZnO Thin-Film Transistor With src="/images/tex/17308.gif" alt="hbox {Ta}_{2}hbox {O}_{5}"> Gate Dielectric by Using La Incorporation [J] . Qian L.X., Liu X.Z., Han C.Y., Device and Materials Reliability, IEEE Transactions on . 2014,第4期

机译：使用 src =“ / images / tex / 17308.gif” alt =“ hbox {Ta} _ {2} hbox {O} _ {5}”>改进的非晶InGaZnO薄膜晶体管的性能使用La Incorporation的栅极电介质
2. Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La₂O₃Gate Dielectric [J] . J. Q. Song, L. X. Qian, Peter T. Lai Device and Materials Reliability, IEEE Transactions on . 2018,第3期

机译：La _{2 O _{3 栅介质中掺入f改善非晶InGaZnO薄膜晶体管的性能}}
3. Improved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation [J] . Jiaqi Song, Lingxuan Qian, Cheunghoi Leung, Applied physics express . 2015,第6期

机译：通过掺氮改善具有HfLaO栅极电介质的非晶InGaZnO薄膜晶体管的电特性
4. High-performance amorphous InGaZnO thin-film transistors with high-k Sm_2O_3 gate dielectrics [C] . Fa-Hsyang Chen, Yu-Hsuan Shao, Wei-Chen Li, IDW '10;International display workshops . 2011

机译：具有高k Sm_2O_3栅极电介质的高性能非晶InGaZnO薄膜晶体管
5. Improved organic thin-film transistors utilizing phosphonate monolayer-treated gate dielectrics. [D] . McDermott, Joseph E. 2007

机译：利用膦酸酯单层处理的栅极电介质的改进的有机薄膜晶体管。
6. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment [O] . Ching-Lin Fan, Fan-Ping Tseng, Chiao-Yuan Tseng 2018

机译：CF4等离子体处理HfO2栅电介质的非晶铟镓锌氧化物薄膜晶体管的电性能和可靠性提高
7. Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor [O] . Qian, LX, Lai, PT, Tang, WM 2014

机译：掺Ta对InGaZnO薄膜晶体管La2O3栅介质的影响

Improved Performance of Amorphous InGaZnO Thin-Film Transistor with Ta2O5 Gate Dielectric by using La Incorporation

摘要

著录项

相似文献

相关主题

期刊订阅