首页> 外文OA文献 >Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer

【2h】

Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer

机译：改善Gaas金属氧化物半导体器件的界面质量，采用NH 3 -plasma处理的Yittrium-oxynitride作为界面钝化层

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Tang WM; Lu HH; Xu JP; Liu L; Wang LS; Lai PT;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer [J] . Lu H. H., Xu J. P., Liu L., Microelectronics & Reliability . 2016,第Jana期

机译：NH3-等离子体处理的钇氧氮化物作为界面钝化层的GaAs金属氧化物半导体器件的界面质量提高
2. Improved interfacial properties of GaAs MOS capacitor with NH_3-plasma-treated ZnON as interfacial passivation layer [J] . Jingkang Gong, Jingping Xu, Lu Liu, Journal of Semiconductors . 2017,第9期

机译：用NH_3-血浆处理的Znon改进GaAs MOS电容器的界面性能作为界面钝化层
3. Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrA1ON as the Interfacial Passivation Layer [J] . Han-Han Lu, Jing-Ping Xu, Lu Liu 中国物理快报：英文版 . 2017,第004期

机译：以ZrA1ON为界面钝化层的GaAs金属氧化物半导体电容器的界面和电学性质
4. InGaAs n-MOS devices integrated using ALD-HfO{sub}2/metal gate without surface cleaning and interfacial layer passivation [C] . Y. C. Chang, M. L. Huang, Y. J. Lee, International Semiconductor Device Research Symposium . 2007

机译：Ingaas N-MOS设备使用ALD-HFO {SUB} 2 /金属栅极，没有表面清洁和界面层钝化
5. Interfacial studies in bulk-heterojunction organic photovoltaic devices: Performance effects and enhancement mechanisms of p-nickel oxide anode interlayers and hydrochloric acid-treated tin-doped indium oxide anodes. [D] . Irwin, Michael David. 2009

机译：体-异质结有机光伏器件的界面研究：对-氧化镍阳极中间层和盐酸处理的掺锡氧化铟阳极的性能影响和增强机理。
6. Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile ResistiveSwitching Devices by Interfacial Band Engineering with an UltrathinAl2O3 Dielectric Material [O] . Writam Banerjee, *, Xiaoxin Xu, 2017

机译：TiOx / Al2O3双层非易失性电阻的可变性改善界面带工程技术的超薄开关设备Al2O3介电材料
7. Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer [O] . Lu HH, Xu JP, Liu L, 2016

机译：NH3等离子体处理的钇氧氮化物作为界面钝化层的GaAs金属氧化物半导体器件的界面质量提高
8. Consequences of Anode Interfacial Layer Deletion. HCl-Treated ITO in P3HT:PCBM-Based Bulk-Heterojunction Organic Photovoltaic Devices [R] . Irwin, M. D., Liu, J., Leever, B. J., 2010

机译：阳极界面层删除的后果。 p3HT中的HCl处理的ITO：基于pCBm的体 - 异质结有机光伏器件

Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer

著录项

引文网络

相似文献

相关主题

期刊订阅