Temperature dependence of the LO phonon sidebands in free exciton emission of GaN

摘要

Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshapes and their energy spacings from the zero-phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one- and two-phonon sidebands are significantly different. Segall-Mahan [Phys. Rev. 171, 935 (1968)] theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between the theory and experiment is achieved by using only one adjustable parameter, which leads to determination of the effective mass of heavy holes (∼0.5 m0). © 2006 American Institute of Physics.