Surface structure of epitaxial Gd(0001) films on W(110) studied by quantitative LEED analysis

摘要

The surface structure of thick (400 Å) Gd(0001) films, epitaxially grown on W(110), is investigated by low-energy electron-diffraction (LEED) IV measurements in combination with dynamical LEED calculations. A first-layer contraction of 2.4% and a second-layer spacing expansion of 1% is found. These findings are in good agreement with literature values determined for the (0001) surface of bulk Gd crystals. No significant difference in the LEED IV data is found between films grown at room temperature and films grown at elevated temperatures.