Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer

摘要

Si MOS capacitors with HfTa oxide and oxynitride as gate dielectric were fabricated. Moreover, AlOxNy or TaOxN y was used as the interlayer between HfTa oxynitride and Si substrate to improve the electrical quality of the capacitors. Experimental results showed that the HfTaOxNy capacitor with TaO xNy interlayer achieved better performance with larger capacitance and smaller leakage current than its counterpart with AlO xNy interlayer. © 2008 IEEE.