Single mode operation of impurity-induced disordering large area vertical cavity surface emitting lasers

摘要

Vertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current. Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50µm.