Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC

摘要

Deep traps in the boron extended tail region of ion implanted 6H-SiC pn junctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of ∼1016 cm-3 of the D center have been observed through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron acceptor in this region, but an induced hole trap Ih at EV+0.46 eV is found under cold implantation conditions. These results support the picture of the extended tail, rich in boron-vacancy complexes such as the D center, which forms as a result of vacancy enhanced indiffusion. The dominance of the electrically active D center in the depletion layer of the technologically important SiC pn junction diode suggests the need for further research in this area. © 1998 American Institute of Physics.