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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

机译：用NH3退火的aLD HfTiO栅介质改善多层mos2晶体管的电性能

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Lai PT; Tang WM; Wen M; Xu JP; Liu L;
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年度 2017
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1. Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric [J] . Ming Wen, Jingping Xu, Lu Liu, Electron Devices, IEEE Transactions on . 2017,第3期

机译：NH3掺杂的ALD HfTiO栅极电介质改善了多层MoS2晶体管的电性能
2. Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric [J] . Xu Jingping, Wen Ming, Zhao Xinyuan, Nanotechnology . 2018,第34期

机译：HFO2封装对少数层MOS2晶体管电气性能的影响，用ALD HFO2作为背栅电介质
3. Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric [J] . Jiyue Zou, Lisheng Wang, Fengxiang Chen AIP Advances . 2019,第9期

机译：提高了具有通过Al2O3电介质完全封装的通道的顶门多层MOS2晶体管的性能
4. Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric [C] . Ming Wen, J. P. Xu, L. Liu, IEEE International Conference on Electron Devices and Solid-State Circuits . 2016

机译：具有ALD HfTiO栅极电介质的多层MoS2晶体管的电性能
5. Materials and electrical properties of ALD zirconium dioxide gate dielectrics. [D] . Perkins, Charles Michael. 2007

机译：ALD二氧化锆栅极电介质的材料和电性能。
6. Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing [O] . Esther Lee, Tae Hyeon Kim, Seung Won Lee, 2019

机译：通过后退火实现具有高k Al2O3栅极电介质的溶胶-凝胶IGZO晶体管的电气性能的改善
7. Improved electrical performance of multilayer MoS2 transistor with NH3-annealed ALD HfTiO gate dielectric [O] . Wen M, Xu JP, Liu L, 2017

机译：具有NH3退火的ALD HfTiO栅极电介质的多层MoS2晶体管的改进电性能

Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric

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