Post-stress interface trap generation induced by oxide-field stress with FN injection

摘要

Interface trap generation in nMOS transistors during both stressing and post-stress periods under the conditions of oxide field (dynamic and dc) stress with FN injection is investigated with charge pumping technique. In contrast to the post-stress interface trap generation induced by hot carrier stress which is a logarithmical function of post-stress time, the poststress interface trap generation induced by oxide-field stress with FN injection first increases with post-stress time but then becomes saturated. The mechanisms for the interface trap generation in both stressing and post-stress periods are described. © 1998 IEEE.