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Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric

机译：远程库仑和界面粗糙度散射对InGaas <斜体> n mOsFET电子迁移率的影响高<斜体> k 叠层栅极介质

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Huang Y; Xu J; Tang WM; Wang L; Lai PT; Lu H; Liu L;
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年度 2015
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1. Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric [J] . Wang Li-Sheng, Xu Jing-Ping, Liu Lu, Nanotechnology, IEEE Transactions on . 2015,第5期

机译：远程库仑和界面粗糙度散射对具有高斜体的InGaAs n MOSFET的电子迁移率的影响
2. Gate Leakage for 28 nm Stacked HfZrO_x Dielectric of p-Channel MOSFETs After Decoupled Plasma Nitridation Treatment With Annealing Temperatures [J] . Wang S., Wang M., Lee W., Plasma Science, IEEE Transactions on . 2014,第12期

机译：p沟道MOSFET退火温度解耦等离子体处理后的28 nm堆叠HfZrO _{x 介电层的栅极泄漏}
3. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiN_x as Gate Dielectric [J] . Hua Mengyuan, Liu Cheng, Yang Shu, Electron Device Letters, IEEE . 2015,第5期

机译：低压化学气相沉积SiN _{x 作为栅介质的基于GaN的金属-绝缘体-半导体高电子迁移率晶体管}
4. Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics [C] . Ono M., Ishihara T., Nishiyama A. Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on . 2003

机译：远程库仑散射对电子迁移率的依赖与叠栅电介质中介电常数的分布
5. Electron transport in bulk-Si NMOSFETs in presence of high-κ gate insulator: Charge trapping and mobility [D] . Maitra, Kingsuk 2005

机译：存在高κ栅极绝缘体的块状Si NMOSFET中的电子传输：电荷俘获和迁移率
6. Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack [O] . Pengying Chang, Xiaoyan Liu, Fei Liu, 2018

机译：具有高κ栅极堆叠的二维InSe FET中的远程声子散射
7. Influences of remote Coulomb and interface-roughness scatterings on electron mobility of InGaAs nMOSFET with high-k stacked gate dielectric [O] . Wang LS, Xu JP, Liu L, 2015

机译：远程库仑和界面粗糙度散射对具有高k堆叠栅极电介质的InGaAs nMOSFET电子迁移率的影响

Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric

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