Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques

摘要

In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.