Implementation of CMRC on HBT power amplifier for WCDMA application

摘要

An InGaP/GaAs heterojunction bipolar transistor (HBT) is developed. By using this HBT, a power amplifier is designed for WCDMA user equipment, band-1 power class-2 application. The HBT power amplifier demonstrates a maximum output power (Pout) of 29.4dBm and a PAE of 48% at the frequency of 1.95GHz. When it operates in WCDMA standard, it achieves a Pout of 27dBm and a PAE of 32.4%. The Adjacent Channel Leakage power Ratio (ACLR) is -33dBc. To further improve the PAE, ACLR and IM3 performance, a CMRC circuit has been implemented on the HBT amplifier. The effect of CMRC on PAE and ACLR is investigated using a low power HBT amplifier. The results show that the ACLR can be improved by the CMRC. © 2004 IEEE.