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Indium Tin oxide modified by Au and vanadium pentoxide as an efficient anode for organic light-emitting devices

机译:由au和五氧化二钒改性的氧化铟锡作为有机发光器件的有效阳极

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摘要

Au/Vanadium pentoxide (V2O5) films on indium tin oxide (ITO) as composite anodes for hole injection in organic light-emitting devices (OLEDs) have been investigated. The device with (6 nm)/V2O5(6 nm) anode shows improved current density-voltage characteristics as compared with the device with ITO/Au as anode. Hole injection is significantly reduced when Au was added on ITO as an anode. However, while a thin V2O5 film is deposited on a Au anode, the barrier height is substantially reduced. The hole injection is facilitated, and the driving voltage of the device decreased by 10 V. In addition, the maximum current efficiency for the ITO/Au/V2O5 OLED is ∼3.5 cd/A, which is higher than that of the ITO/Au anode device (∼1.1 cd/A) and ITO/V2O5 OLED of ∼2.8 cd/A. © 2008 IEEE.
机译:研究了铟锡氧化物(ITO)上的Au /五氧化二钒(V2O5)薄膜作为有机发光器件(OLED)中空穴注入的复合阳极。与以ITO / Au为阳极的器件相比,具有(6 nm)/ V2O5(6 nm)阳极的器件显示出改进的电流密度-电压特性。当在ITO上添加Au作为阳极时,空穴注入显着减少。但是,尽管在Au阳极上沉积了V2O5薄膜,但势垒高度却大大降低了。有利于空穴注入,并且器件的驱动电压降低了10V。此外,ITO / Au / V2O5 OLED的最大电流效率约为3.5 cd / A,高于ITO / Au阳极装置(〜1.1 cd / A)和ITO / V2O5 OLED〜2.8 cd / A。 ©2008 IEEE。

著录项

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    Choy WCH; Zhang HM;

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  • 年度 2008
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  • 正文语种 eng
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